Investigations have been conducted focused on the fundamental material properties of AIN and high AI-content AIGaN alloys and further developed MOCVD growth technologies for obtaining these materials with improved crystalline quality and conductivities
Research Areas: physics of III-Nitride optoelectronics and thermoelectrics semiconductor alloys and ...
There is an increasing demand for high-power electronic components and optoelectronic devices with l...
The group III-nitride semiconductors are enjoying an ever-increasing research interest from compou...
The objectives of this project were to investigate the optical and electrical properties of III-nitr...
The III-nitride semiconductor materials have wide direct bandgap ranging from 6.2 eV (AlN); through ...
Many theoretical and experimental works are made on the wurtzite phase of indium nitride (InN), gall...
The optical properties of the group-III-nitride materials are obviously of direct relevance for opto...
This book focuses on three main themes. Theme one - advances in basic science. Point defects, disloc...
Contains fulltext : 19110_optichofg.pdf (publisher's version ) (Open Access)Group ...
This paper summarizes some of the recent advances made on III-nitride ultraviolet photonics material...
A wide variety of group III-Nitride-based photonic and electronic devices have opened a new era in t...
This paper summarizes some of the recent advances made by our group on the growth, characterization ...
Recently there has been a rapid domestic development in group III nitride semiconductor electronic m...
This report represents the completion of a three-year Laboratory-Directed Research and Development (...
Cette thèse portait sur la caractérisation électrique et optique de nouveaux matériaux à base d'alli...
Research Areas: physics of III-Nitride optoelectronics and thermoelectrics semiconductor alloys and ...
There is an increasing demand for high-power electronic components and optoelectronic devices with l...
The group III-nitride semiconductors are enjoying an ever-increasing research interest from compou...
The objectives of this project were to investigate the optical and electrical properties of III-nitr...
The III-nitride semiconductor materials have wide direct bandgap ranging from 6.2 eV (AlN); through ...
Many theoretical and experimental works are made on the wurtzite phase of indium nitride (InN), gall...
The optical properties of the group-III-nitride materials are obviously of direct relevance for opto...
This book focuses on three main themes. Theme one - advances in basic science. Point defects, disloc...
Contains fulltext : 19110_optichofg.pdf (publisher's version ) (Open Access)Group ...
This paper summarizes some of the recent advances made on III-nitride ultraviolet photonics material...
A wide variety of group III-Nitride-based photonic and electronic devices have opened a new era in t...
This paper summarizes some of the recent advances made by our group on the growth, characterization ...
Recently there has been a rapid domestic development in group III nitride semiconductor electronic m...
This report represents the completion of a three-year Laboratory-Directed Research and Development (...
Cette thèse portait sur la caractérisation électrique et optique de nouveaux matériaux à base d'alli...
Research Areas: physics of III-Nitride optoelectronics and thermoelectrics semiconductor alloys and ...
There is an increasing demand for high-power electronic components and optoelectronic devices with l...
The group III-nitride semiconductors are enjoying an ever-increasing research interest from compou...
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